Fabrication Pathways of p–n Cu2O Homojunction Films by Electrochemical Deposition Processing

Fabrication of p–n Cu 2 O homojunction films was demonstrated by multiple steps of electrochemical deposition (ECD) processing with the adjustment of the deposition periods. The deposited Cu 2 O films, p-type and n-type Cu 2 O films, using ECD processing were, respectively, characterized using several analytical tests. Fabrication strategies of p–n Cu 2 O homojunction films were proposed using the sequential deposition steps of p-Cu 2 O and n-Cu 2 O films. Results showed that the prepared Cu 2 O films were influenced by the ECD conditions and displayed different semiconductor, crystal, and morphological properties. A p-type Cu 2 O (p-Cu 2 O) film can be transformed into a n-type Cu 2 O (n-Cu 2 O) film by the control of the ECD deposition periods. Different positions of p- and n-Cu 2 O layers located in the p–n homojunction devices can be produced by the adjustment of the deposition periods in the ECD processing steps. The interaction of n-Cu 2 O grown on a p-Cu 2 O film during the ECD processing was revealed to interpret the formation of the p–n homojunction devices. The design and fabrication of the p–n homojunction films were discussed by the fabrication strategy using the multiple ECD processing steps.