The Universality of the Conductance Distribution at the Critical Point of the Disorder-Induced Metal-Insulator Transition

The probability distribution P ( g ) of the conductance g at the critical points of the metal-insulator transition is calculated numerically for the three-dimensional orthogonal and the two-dimensional symplectic systems. We show that the form of P ( g ) does not depend on the microscopic details of the models as well as on the position of the critical points on the critical line in the space of the external parameters (energy, disorder).