Low pressure chemical vapor deposition of metallic films of iron, manganese, cobalt, copper, germanium and tin employing bis(trimethyl)silylamido complexes, M(N(SiMe3)2)n

The deposition of metallic films by chemical vapor deposition, in contrast to the use of physical methods such as evaporation or sputtering, offers the potential advantage of conformal coverage and substrate selectivity in microelectronics applications. Here, the title compounds have been used to deposit high‐purity metal films and can be seen as substrate‐selective precursors.