Variability Impact of Random Dopant Fluctuation on Nanoscale Junctionless FinFETs

Junctionless fin held-effect transistor (FinFET) variability due to random dopant fluctuation (RDF) was investigated for sub-32-nm technology generations using technology computer-aided design (TCAD) simulations. Results indicate that variations in threshold voltage, drive current, leakage current, and drain-induced barrier lowering are heavily impacted by RDF for junctionless FinFETs with sufficiently high channel doping (greater than 1019cm-3). Unexpectedly, the RDF impact is found to be less severe for finer technology generations, although the overall magnitude is still significant compared to line-edge-roughness-induced variability.