Direct Measurement of SET Pulse Widths in 0.2-μm SOI Logic Cells Irradiated by Heavy Ions

Heavy-ion-induced SET-pulse widths in NOR-logic cells fabricated by a 0.2-mum FD-SOI technology are directly measured by using an on-chip self-triggering flip-flop circuit. The pulse widths are distributed from 0.3 to 1.0 ns under a constant LET of 40 MeVmiddot cm2/mg