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July 30, 2007Applied Physics Letters

Photocurrent analysis of a fast Ge p-i-n detector on Si

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MOMichael OehmeUniversity of StuttgartJWJ.H. WernerUniversity of StuttgartEKE. KasperStuttgart Technical University of Applied Sciences

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Oehme et al. (2007) studied this question.

synapsesocial.com/papers/6aaf2b98327e2162f5d05cebhttps://doi.org/10.1063/1.2757599
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