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A SiO/sub 2/-Si-SiO/sub 2/-Si-SiO/sub 2/-Si structure produced by the separation by implantation of oxygen (SIMOX) process used for dual vertically integrated waveguiding in silicon at lambda =1.3 mu m is discussed. Independent waveguiding is observed when 2- mu m-thick Si cores are separated by 0.36- mu m-thick SiO/sub 2/. Coupled waveguiding is found for an 0.12- mu m intercore oxide thickness.>
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Soref et al. (1991) studied this question.
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