Junctionless Ge p-Channel Metal–Oxide–Semiconductor Field-Effect Transistors Fabricated on Ultrathin Ge-on-Insulator Substrate

A junctionless field-effect transistor (FET) has been proposed using a Si nanowire FET. It avoids the junction formation process and shows less sensitivity to the channel interface. We discuss the junctionless FET on a Ge-on-insulator substrate, which combines the higher mobility in Ge than in Si with all the advantages of a junctionless FET. The device shows similar current–voltage ( I – V ) characteristics to conventional FETs, and the on/off current ( I on / I off ) ratio is larger than 10 4 . The field-effect mobility seems to be rather flat with regard to the carrier density.