Effects of substrate bias voltage on plasma parameters in temperature control using a grid system

In this paper we investigate the effects of substrate bias voltage on plasma parameters in temperature control using a grid system in inductively coupled plasma. Electron temperature can be controlled from 2.5 eV to 0.5 eV at 1 mTorr Ar plasma using grid bias voltage, and the electron temperature is a strong function of substrate bias voltage. The main control parameter determining the electron temperature is the potential difference between grid-biased voltage and the plasma potential in the temperature controlled region (ΔφII,g). When substrate bias voltage is negative, plasma parameters do not vary with substrate bias voltage due to constant ΔφII,g