Growth conditions for high-photoresponsivity randomly oriented polycrystalline BaSi2 films by radio-frequency sputtering: Comparison with BaSi2 epitaxial films

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We formed randomly oriented polycrystalline BaSi2 films on TiN(metal)/SiO2 substrates at 600 °C by co-sputtering BaSi2 and Ba targets. Ba-to-Si atomic ratios reaching the substrate (N Ba/N Si = 0.28–0.76) was controlled by a radio-frequency power set on the Ba target (P Ba = 0–80 W), while that on the BaSi2 target was fixed at 70 W. The highest photoresponsivity was obtained when P Ba was set to as a small value as possible to the extent without causing precipitated Si to occur. This is the same simple way of finding the conditions to achieve high photoresponsivity as that for BaSi2 epitaxial films.