We report on the electrical and optical properties of a GaN based light emitting diode (LED) utilizing a ZnO current spreading layer that was deposited by a low temperature aqueous technique. For comparison, a LED employing a conventional thin Ni/Au current spreading layer was also fabricated. In both cases, the same metal organic chemical vapour deposition (MOCVD) grown c -plane GaN LED on patterned sapphire wafer was used. Using an integrated sphere measurement, we report a factor of 1.93 power output increase at 20 mA for the ZnO current spreading layer compared to Ni/Au.
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Thompson et al. (2009) studied this question.
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