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By using the sputtering method in a mixture of Ar and SiF4 gases, a purely fluorinated amorphous-silicon (a-Si : F) has been deposited, which does not contain hydrogen, and whose dangling bonds are terminated only by fluorine. Fluorine content, infrared absorption, and temperature dependence of conductivity, and also their variation due to the annealing process, are experimentally studied for this a-Si : F. It is found that all these are kept unchanged even after an annealing process at 600 °C, and that this new a-Si : F is heat resistant.
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Matsumura et al. (1980) studied this question.
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