Execution of energy efficient detection of hydrogen using Pt/WO x /SiC semiconductor structure

It has been shown that, at elevated temperatures (∼350°C), the most distinct response to H2 from the thin film structure Pt/WO x /SiC is achieved at registration of change in voltage for the reverse branch of a current-voltage characteristic. Comparative studies of electric current conduction through the structure and over its surface (with deposited Pt film) have led to the conclusion that a change in properties of the Pt/WO x and WO x /SiC interfaces under action of H2 mostly determines efficiency of response of the structure in the case of “transverse” measuring geometry. In the case of a 2% concentration of H2 in air the voltage shift for the reverse branch at a current of ∼10 μA reached 5 V against 2 V on the forward branch and “planar” geometry of measurements.