An investigation of the multicarrier transport properties of -doped InSb at high temperatures using a mobility spectrum technique

Transport properties of Si--doped InSb grown by molecular beam epitaxy are studied. The mobility spectrum (MS) analysis made over a wide temperature range reveals three species of carriers: those associated with the bulk of the film, and electrons in quantized subbands in the -layer. At low temperatures the MS data are consistent with self-consistent calculations and measurements of the Shubnikov - de Haas oscillations. The far-infrared cyclotron resonance lineshapes are well described by the Drude approximation using the obtained values of subband mobilities, concentrations and effective masses.