⌘+K

Pulse Explore Communities Researchers Journals

Home Communities Explore

February 1, 1988IEEE Transactions on Nuclear Science

gamma -ray and neutron irradiation characteristics of pure silica core single mode fiber and its lifetime estimation

Yoshiki Chigusa Manabu Watanabe Michihisa Kyoto Masaharu Ooe T. Matsubara Satoru Okamoto Takao A. Yamamoto Toshiyuki Iida K. Sumita

View at Publisher

Ask AI

Bookmark

Share

Abstract

The investigation of the induced loss for a single-mode (SM) optical fiber under gamma -ray irradiation and neutron irradiation is described. An estimation method for induced loss with loss dose rate and long-term gamma -ray irradiation is proposed. The induced loss of pure-silica-core SM fiber is estimated to be 50 times lower than that of germanium containing silica-core SM fiber after irradiation with 1 R/h for 25 years.>

Discussion

No takes yet. Share an insight, caveat, or question.

Cite This Study

Chigusa et al. (1988) studied this question.

synapsesocial.com/papers/6ab1f9eb42b283d51dc86f9e https://doi.org/10.1109/23.12855

View at Publisher

Ask AI

Bookmark

Share

Keep reading

Synapse has enriched 5 related papers. Consider them for comparative context:

1Impact of Ionizing Radiation and Thermal Annealing on the Electrooptic Response of Silicon Photonics Ring ModulatorsIEEE Transactions on Nuclear Science · Mon,
2Timepix3 and Silicon Diode Measurements at the AmBe Neutron Source at CERN and Their Comparison With Monte Carlo SimulationsIEEE Transactions on Nuclear Science · Mon,
3Large-Batch Testing Methodology for Compliance to Low Destructive SEE Cross-Sections in Accelerator Control SystemsIEEE Transactions on Nuclear Science · Mon,
4TID Degradation Mechanisms in Gate-All-Around Silicon Nanowire FETsIEEE Transactions on Nuclear Science · Mon,
5Radiation-Hardened-by-Design Techniques to Mitigate Inductor-Originated Single-Event Frequency Transients in CMOS LC-Tank OscillatorsIEEE Transactions on Nuclear Science · Mon,

More from IEEE Transactions on Nuclear Science

Ionization Radiation Damage of 65 nm nMOS Technologies Under Different Bulk Voltages and TemperaturesWed,
Impact of Proton Energy on Displacement Damage and Total Ionizing Dose in SiC Vertical Power MOSFETsThu,
Characterization of the Radiation Field in LHC IR4 Using a Timepix Radiation Monitor Measurements and FLUKA SimulationsMon,
Performance Evaluation of Single- and Double-Layer CZT Compton Cameras for 225 Ac ImagingWed,
Effect of the Anti-Punchthrough Implant on the Total Ionizing Dose Response of Planar Silicon n-MOSFETsFri,