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The modulated photoluminescence spectra have been performed on as-grown and in situ annealed arsenic-doped Hg1−xCdxTe grown by molecular beam epitaxy. Besides the discussions about shallow levels including VHg, AsHg, VHg–AsHg complex, and TeHg, two deep levels have been observed in as-grown with an ionization energy of ∼77.0 and ∼95.0 meV, respectively, which can be completely eliminated by annealing and temporarily ascribed to As-related clusters or interstitials.
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Yue et al. (2008) studied this question.
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