Memristive Switching Behavior of MoO3 Decorated PSi Heterostructure and Impact of Temperature on Device Reliability

This paper presents the fabrication, testing device reliability and impact of temperature variation on the MoO3 decorated PSi heterostructure. The memristor devices are fabricated using standard microfabrication processes. The MoO3 decorated PSi heterostructure memristor has shown the current switching ratio, resistance switching ratio of 67 and 7×103 respectively at room temperature (RT). The reliability test of the MoO3 decorated PSi heterostructure based memristor device is tested using the thermal stimuli ranging from RT to 100∘ C. The developed device has shown the current switching ratio of 200 at 90∘ C, which is close to three times higher than the measurements at RT. Further, stability/reproducibility of the fabricated device was verified using the modulated frequency test at 90∘ C.