200 V All-SiC Floating Gate Driver Process Platform on 4H-SiC P-epi/N+ Substate for High-Temperature Applications

This brief reports a 200 V all-SiC integration process platform integrating low-voltage (LV) and high-voltage (HV) devices, such as LV nMOS, LV pMOS, resistor, capacitor, HV lateral DMOS (LDMOS), and HV diode. A P-buffer layer is adopted to increase vertical blocking voltage. The high-temperature tolerance of fabricated HV and LV devices are evaluated. Based on the LV and HV devices, a 200 V monolithic all-SiC half-bridge driver composed of a low-side drive circuit and a high-side drive circuit is designed in this brief. Thanks to HV LDMOS and HV diode, the LV drive signal can be converted to an HV signal through the level-shift circuit, which realizes a high-side floating gate driver. Combined with a low-side CMOS driver, a 200 V half-bridge driver operating at 200 ° C has been verified based on this SiC platform.