Characterization of CdTe/CdZnTe detectors

In order to characterize CdTe/CdZnTe detectors in a planar configuration, we have developed a new method to extract /spl mu//spl tau/ products. In this method, we prepare an analytic spectral model based on the charge transport properties in the device, which is intended to be used in fitting calculation. The low mobility-lifetime (/spl mu//spl tau/) products of carriers in CdTe/CdZnTe detectors produce a position dependency in the charge induction efficiency. The model takes the induction efficiency and interaction positions of photons into account. Since the model is parameterized by /spl mu//spl tau/ products, it can extract /spl mu//spl tau/ products. Here, we demonstrate how the model works based on the results from 2-mm-thick HPB CdZnTe and THM CdTe detectors.