A 1.7-dB Minimum NF, 22–32-GHz Low-Noise Feedback Amplifier With Multistage Noise Matching in 22-nm FD-SOI CMOS

A low-noise feedback amplifier (LNA) with interstage noise matching is implemented in 22-nm fully depleted silicon-on-insulator (SOI)-CMOS technology. Minimum noise figure (NF) is 1.7 dB centered at 28 GHz, and NF remains below 1.98±0.25 dB across a 10-GHz range. Peak gain of the two-stage LNA is 21.5 dB at 22 GHz, and the bandwidth (BW) for |S21| is 19-36 GHz. Input and output return losses are better than 10 dB across an effective LNA BW of 22-32 GHz. The third-order input intercept is -13.4 dBm at peak gain when dissipating 17.3 mW. Continuous dc power control on the fly is implemented using modulation of FET backgates. When dc power consumption is reduced 5.6 mW, NF increases by less than 0.5 dB, peak gain decreases by 3.6 dB, and input return loss remains better than 10 dB with no change in effective BW.