A High Coupling Coefficient 2.3-GHz AlN Resonator for High Band LTE Filtering Application

This letter reports an aluminium nitride (AlN)based micromechanical resonator with high-effective coupling coefficient (k2eff) and low insertion loss (IL), which are comparable with those of Film Bulk Acoustic Resonators (FBARs). The in-house-fabricated resonator comprises of lithographically patterned top and bottom molybdenum interdigitated electrode fingers and a layer of 1-μm-thick AlN sandwiched in between. Synergetic inter-mode coupling between the constituent thickness mode and the lateral mode can be realized within a wide frequency range, which can be treated as a subcategory of degenerated cross-sectional Lamé mode, enabling the capability of lithographic tuning of resonant frequency yet not compromising k2eff. Measurement results show that the designed 2.3-GHz resonator achieves a k2effof 6.34% and an IL of 0.26 dB upon direct connection to a network with 50-Ω termination, making it a promising candidate for Wireless Local Area Network (WLAN) and high band Long Term Evolution (LTE) band selection filtering applications.