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We investigate the effects of metallization layers on the radiation hardness of an epitaxial CMOS memory technology using Monte Carlo simulations. A geometrically and compositionally realistic three-layer metallization scheme is employed in detailed radiation transport simulations that include contributions from discrete /spl delta/-rays and nuclear reactions. The presence of high-Z plugs used to connect different metallization layers can have a significant effect on the single-event sensitivity depending on the location of the high-Z material relative to the sensitive region of the underlying device.
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Kobayashi et al. (2005) studied this question.
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