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A new relationship between the specific ON-resistance RONand breakdown voltage VBfor the balanced symmetric superjunction (SJ) device is presented to produce the lowest RONfor a given VB. The design formulas, including the doping density NW and the drift length Ld, are given for both the nonfull depletion (NFD) and the full depletion SJ devices with an introduction of the normalized VBfactor η. For the NFD SJ MOSFET, an RON∝ V1.03 B relationship is obtained. The analytical results show good agreement with the numerical results.
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Zhang et al. (2015) studied this question.
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