Fabrication of photonic crystal structures by tertiary-butyl arsine-based metal–organic vapor-phase epitaxy for photonic crystal lasers

The fabrication of air/semiconductor two-dimensional photonic crystal structures by air-hole-retained crystal regrowth using tertiary-butyl arsine-based metal–organic vapor-phase epitaxy for GaAs-based photonic crystal lasers is investigated. Photonic crystal air holes with filling factors of 10–13%, depths of ∼280 nm, and widths of 120–150 nm are successfully embedded. The embedded air holes exhibit characteristic shapes due to the anisotropy of crystal growth. Furthermore, a low lasing threshold of ∼0.5 kA/cm2 is achieved with the fabricated structures.