Channel width dependence of hot-carrier induced degradation in shallow trench isolated PMOSFETs

Channel width dependence of the hot-carrier induced degradation in pMOSFETs with a shallow trench isolation structure is investigated. Enhanced degradation is observed in a narrow channel width device. The narrow width device shows large electron trapping efficiency of the gate oxide film though the gate current is smaller than the wide width device. The mechanical stress caused by shallow trench isolation may be responsible for this phenomenon.