Direct Growth ofm-plane GaN with Epitaxial Lateral Overgrowth fromc-plane Sidewall ofa-plane Sapphire

The direct growth of m -plane GaN via metal–organic vapor phase epitaxy has been demonstrated using a deep-groove-patterned a -plane sapphire substrate with a c -plane sidewall and terrace covered with a SiO 2 mask. The GaN layer was laterally grown from the etched c -plane sidewall in the a -plane sapphire substrate, which means c -direction growth of GaN. According to the epitaxial relationship which m -axis of GaN layer corresponds to a -axis of c -plane sapphire when using a low-temperature buffer layer, m -plane GaN was grown with an epitaxial lateral overgrowth from the c -plane sidewall of the a -plane sapphire.