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November 1, 1989Japanese Journal of Applied Physics

Optical Investigation on the Growth Process of GaAs during Migration-Enhanced Epitaxy

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Authors

NKNaoki KobayashiMie UniversityYHYoshiji HoríkoshiWaseda University

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Kobayashi et al. (1989) studied this question.

synapsesocial.com/papers/6ab725f2e8e89c0a8ec8b4eahttps://doi.org/10.1143/jjap.28.l1880
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  1. 1Low-Temperature Growth of GaAs and AlAs-GaAs Quantum-Well Layers by Modified Molecular Beam Epitaxy1986 · 382 citations
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  4. 4Gallium Arsenide Surface Structure and Reaction Kinetics: Field Emission Microscopy1966 · 40 citations
  5. 5Simultaneous Observation of RHEED Oscillation during GaAs MBE Growth with Modulated Electron Beam1986 · 6 citations