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Cubic crystalline MgZnO was grown on p-type Si (0 0 1) by a reactive e-beam evaporation system at low temperature. AES depth profiles for the MgZnO films demonstrate good uniformity of Mg, Zn and O components. MIS capacitors were fabricated and C – V and I – V characterizations were performed to evaluate the annealing effect on electrical properties of MgZnO films. High temperature annealing up to 900 °C under O 2 ambient significantly improves C – V and I – V characteristics. The interface trapped charges decrease from 5.30 × 10 12 cm −2 to 2.48 × 10 11 cm −2 as the annealing temperature increases from 550 °C to 900 °C, indicating the quality improvement of the interfacial layer. Meanwhile the density of mobile charges increases from 1.93 × 10 10 cm −2 to 1.72 × 10 11 cm −2 as the annealing temperature increases from 550 °C to 900 °C, which is attributed to the evaporation of O near the surface and migration of Zn 2+ towards the surface from MgZnO alloy film under such high temperatures.
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Liang et al. (2005) studied this question.
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