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May 1, 2008Journal of Vacuum Science & Technology B Microelectronics and Nanometer Structures Processing Measurement and Phenomena

Molecular beam epitaxy growth of metamorphic high electron mobility transistors and metamorphic heterojunction bipolar transistors on Ge and Ge-on-insulator/Si substrates

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Authors

DLD. LubyshevIQE (United States)JFJ. M. FastenauUniversity of Central FloridaYWYuh‐Renn WuNational Taiwan University

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Lubyshev et al. (2008) studied this question.

synapsesocial.com/papers/6ab86ff563ad9dfe0d262ab1https://doi.org/10.1116/1.2884749
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  1. 1Metal-organic chemical vapor deposition of single domain GaAs on Ge/GexSi1−x/Si and Ge substrates2000 · 160 citations
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  3. 3Wafer Direct Bonding: From Advanced Substrate Engineering to Future Applications in Micro/Nanoelectronics2006 · 176 citations