Resistance Switching Behavior of a Perhydropolysilazane-Derived SiOx-Based Memristor

This is the authors' abstract. We don't add key points for this paper.

SiO x is an important dielectric material layer for resistive switching memory due to its compatibility with complementary metal-oxide semiconductor (CMOS) technology. Here we propose a solution process for a SiO x dielectric layer based on perhydropolysilazane (PHPS). A series of SiO x layers with different compositions are prepared by controlling the conversion process from PHPS, then the resistance switching behaviors of typical Ag/SiO x /Au memristors are analyzed. The effect of oxygen vacancies and Si–OH groups on the formation and rupture of Ag conducting filaments (CFs) in the SiO x layer was thoroughly investigated. Ultimately, we achieved a high-performance memristor with a coefficient of variation (σ/μ) as low as 0.16 ± 0.08 and an on/off ratio as high as 10 6, which can rival the performance of the SiO x memristors based on the high-vacuum and high-cost vapor deposition methods. These findings demonstrate the high promise of the PHPS-derived SiO x dielectric layer in the field of memristors.