Multiple gate oxide technology using nitrogen implantation and high-pressure O2oxidation

We demonstrate a novel process for multiple gate oxide technology using a combination of nitrogen implantation and high-pressure O 2 oxidation. Using this approach we realize a range of different thicknesses from 26 to 140 Å simultaneously on a silicon wafer. A secondary ion mass spectroscopy profile shows an identical nitrogen peak that cannot be obtained by conventional oxynitridation. A vertical high-pressure (VHP) O 2 device shows a leakage current about ten times lower and only ∼40 mV difference in V FB compared to the SiO 2 device when the nitrogen dose is 7 × 10 14 atoms cm −2 . The elimination of boron penetration is observed after a drive-in of 1050 °C for 30 s. In this work, we demonstrate a novel approach to realize >500% difference in the oxide growth rate using VHP oxidation (15–25 atm at 750–850 °C) and N implantation (between 1 × 10 14 and 3 × 10 15 atoms cm −2 ).