Metal-Insulator Transition in a Disordered Two-Dimensional Electron Gas in GaAs-AlGaAs at Zero Magnetic Field

A metal-insulator transition in two-dimensional electron gases at B0ex0ex=0ex0ex0 is found in Ga[Al]As heterostructures, where a high density of self-assembled InAs quantum dots is incorporated just 3 nm below the heterointerface. The transition occurs at resistances around h/e² and critical carrier densities of 1.2×10¹¹cm^-2. Effects of electron-electron interactions are expected to be rather weak in our samples, while disorder plays a crucial role.