Enhancement-Modem-plane AlGaN/GaN Heterojunction Field-Effect Transistors

The first demonstration of the m -plane AlGaN/GaN heterojunction field-effect transistor was reported. This transistor exhibited enhancement-mode operation, with the threshold voltage of +2.0 V owing to the nonpolar AlGaN/GaN heterojunction. The maximum drain–source current density and the maximum transconductance were 130 mA/mm at a gate–source voltage ( V gs ) of +9 V and 25 mS/mm at V gs = +8 V, respectively. The on-to-off ratio was over 10 6 .