Investigation of Hot-Carrier-Induced Degradation Mechanisms in p-Type High-Voltage Drain Extended Metal–Oxide–Semiconductor Transistors

Hot-carrier-induced degradation in p-type drain extended metal–oxide–semiconductor (DEMOS) devices is investigated. The gate voltage biased at the second substrate current peak produces the most device degradation. The generation of interface state (Δ N it ) in the channel region, Δ N it in the drift region under poly-gate, and negative oxide-trapped charge (Δ N ot ) in the drift region outside poly-gate are responsible for device parameter degradation. Δ N it in the channel region causes threshold voltage and maximum transconductance degradation. Δ N ot in the drift region outside poly-gate leads to the increase of linear drain current ( I dlin ) at the beginning of stress. Δ N it in the drift region under poly-gate results in the turnaround behavior of | I dlin | shift as the stress time is longer.