The Al 3p occupied density of states in GaAs(30 AA)-Ga 0.7 Al 0.3 As(31 AA) heterostructures is studied and compared with that of bulk Ga 0.7 Al 0.3 As through X-ray emission spectroscopy induced by electrons. The radiative recombination of the Al 1s core exciton is also analysed. Partial dehybridization of the Al p and s valence and conduction states is observed for the first time in the barriers of a superlattice and of a single quantum well. These changes suggest that the Al electron distributions of neighbouring barriers are not coupled in heterostructures of 30 AA period and are governed by their quasi-2D character.
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Vergand et al. (1993) studied this question.
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