Modeling high-energy heavy-ion damage in silicon

We identify a discrepancy between experimental data and model predictions by a widely used radiation transport code, SRIM. We describe a method for determining the implant and damage profiles of energetic heavy ions that better agrees with experimental data than SRIM Monte Carlo predictions. Results of our method are given and compared to experimental data for a range of ion types and energies. Finally, the reason for discrepancy is discussed.