The metal-gate granularity-induced threshold voltage (VT) variability and VTmismatch in Si gate-all-around (GAA) nanowire n-MOSFETs (n-NWFETs) are studied using coupled 3-D statistical device simulations considering quantum corrected room temperature drift-diffusion transport. The impact of metal-gate crystal grain size on linear and saturation mode VTvariability are analyzed. The VTmismatch study predicts lower mismatch figure of merit (AVT) in TiN-gated Si GAA n-NWFETs compared with the reported experimental mismatch data for TiN-gated Si FinFETs.
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Nayak et al. (2014) studied this question.
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