Performance improvement of 1.52 µm (Ga,In)(N,As)/GaAs quantum well lasers on GaAs substrates

(Ga,In)(N,As)/GaAs single quantum well lasers have been grown by molecular beam epitaxy. Room temperature pulsed operation at a wavelength of 1515 nm is achieved. As-cleaved 1000 µm-long lasers have a threshold current density of 4.06 kA/cm2 and a slope efficiency of 0.075 W/A per facet.