Fundamental principles of instrument and technological modeling of SEE in the design of power electronics products

The physico-technological foundations of the occurrence of single effects (see) in power ECB structures are described. The identification of the mechanisms of catastrophic failures (Seba, selo, SESB) and dielectric breakdown layers (SEGR/CEDR) in silicon heterostructural and devices has been carried out. Critical regions with increased electric field strength in the active volume of the crystal and peripheral zones have been identified. The effect of activation of parasitic bipolar and thy-ristor structures on the radiation resistance of products is estimated.