40 Gbit/s photonic receivers integrating UTC photodiodes with high- and low-confinement SOAs using quantum well intermixing and MOCVD regrowth

Photonic receivers integrating unitravelling carrier (UTC) photodiodes with high saturation power/high gain semiconductor optical amplifiers (SOAs) are presented. The SOAs demonstrated up to 28 dB of gain with saturation output powers of up to 18.6 dBm, while the UTC photodiodes were capable of 40 Gbit/s operation under high photocurrent operation. The chip-coupled receiver sensitivity was better than −20 dBm at 40 Gbit/s. A high-flexibility quantum well intermixing and MOCVD regrowth integration method was used for device fabrication.