650°C process of SrBi2Ta2O9 (SBT) has been achieved through the use of new metal organic deposition (MOD) solution and the optimization of the deposition conditions. The sample showed a high remnant polarization (2Pr) of 14 μC/cm2 @3V, a low leakage current of 10–8 A/cm2 or less @3V, and a fatigue-free nature. We believe this processing will realize high-density FeRAM integration of SBT.
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Uchiyama et al. (2000) studied this question.
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