Selective Metallization of Mg/NH3-Treated Teflon by Copper CVD

The surface of Teflon, which can be made hydrophilic by a chemical treatment in a solution of solvated electrons in the presence of magnesium, can be restored by UV photochemical oxidation under oxygen. The Mg/NH3-treated Teflon surfaces are easily metallized in a single-step process by copper CVD when (VTMS)Cu(hfac) or (MHY)Cu(hfac) are used as precursors (where VTMS = vinyltrimethylsilane, hfac = hexafluoroacetylacetonate, and MHY = 2-methyl-1-hexene-3-yne). The growth rate of the copper film (thickness 200–500 nm) is between 30 and 50 nm min−1, depending upon the precursor used. The Cu films, with a resistivity of 1.9 ± 0.2 μΩ cm, are pure, as determined by X-ray photoelectron spectroscopy (XPS). Patterned UV irradiation of the treated Teflon results in an identical pattern of copper after CVD, and hence selective copper deposition can be achieved on Teflon.