Optimization of Lateral Superjunction Based on the Minimum Specific ON-Resistance

The optimization methodology of the minimum specific ON-resistance RON,minfor the lateral superjunction device is proposed based on the concepts of charge and potential electric fields in this paper. From the RON,minmethod, a new relationship between RONand breakdown voltage VBis developed, and the analytical formulas are obtained to directly give the doping concentration N and the drift length Ld. The calculated results, including the 800 and 1600 V examples, are in good agreement with the simulations. The optimized designs are also compared with the existing experimental and simulated data. It is shown that RONfrom the proposed optimization method is minimum, and the methodology of RON,minis universal.