54‐2: High‐Performance P‐Type Tellurium‐Based Thin‐Film Transistors on a 6‐in. Wafer and Their Applications

Here, we report on the sputtered p‐type Tellurium (Te) thin‐film transistors (TFTs) and circuits with high device performances. We also fabricate and optimize the device characteristics of p‐type Te TFTs with sub‐100 nm channel length using a novel photolithography method. Finally, vertically integrating p‐type TFTs with n‐type ones are demonstrated for monolithic 3‐ dimensional (M3D) applications.