The study demonstrates band alignment and electrical performance of SnO/β-Ga2O3 heterojunctions, indicating potential in advanced power devices.
In this study, we present the fabrication of vertical SnO/ β -Ga 2 O 3 heterojunction diode (HJD) via radio frequency (RF) reactive magnetron sputtering. The valence and conduction band offsets between β -Ga 2 O 3 and SnO are determined to be 2.65 and 0.75 eV, respectively, through X-ray photoelectron spectroscopy, showing a type-Ⅱ band alignment. Compared to its Schottky barrier diode (SBD) counterpart, the HJD presents a comparable specific ON-resistances ( R on,sp ) of 2.8 mΩ·cm² and lower reverse leakage current ( I R ), leading to an enhanced reverse blocking characteristics with breakdown voltage (BV) of 1675 V and power figure of merit (PFOM) of 1.0 GW/cm². This demonstrates the high quality of the SnO/ β -Ga 2 O 3 heterojunction interface. Silvaco TCAD simulation further reveals that electric field crowding at the edge of anode for the SBD was greatly depressed by the introduction of SnO film, revealing the potential application of SnO/ β -Ga 2 O 3 heterojunction in the future β -Ga 2 O 3 -based power devices.
No takes yet. Share an insight, caveat, or question.
Wu et al. (2025) studied this question.
Synapse has enriched 5 closely related papers on similar clinical questions. Consider them for comparative context: