A pn‐heterojunction is fabricated by depositing an n‐type β‐Ga 2 O 3 film by pulsed laser deposition (PLD) on c‐cut Al 2 O 3 . P‐type cuprous oxide films, Cu 2 O, are then deposited by PLD, as well as by radio frequency (RF) magnetron sputtering. It is concluded that hole injection is prohibited by a 3.26 eV valence band barrier, as measured by X‐ray photo‐electron spectroscopy (XPS) and ultraviolet photoelectron spectroscopy (UPS). Heterojunction diode structures are prepared on the front side and electrical measurements demonstrate a rectification ration of 8 orders of magnitude and an ideality factor close to 2, indicating interface recombination‐controlled forward current. The junction is also optically active and shows a very fast photo‐response to 275 nm UV light.
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Khartsev et al. (2024) studied this question.
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