Analysis of GAA‐NC‐VTFET: Behavioral Study and Reduction of Short Channel Effects

In this article, performance analysis of gate‐all‐around negative capacitance vertical tunnel FET (GAA‐NC‐VTFET) is proposed. The device creates a heterojunction design with negative capacitance HfO 2 (NC‐HfO 2 ), and the presented structure is analyzed for the reduction of various short channel effects for minimal power applications. Because of the negative capacitance effects, the presented device shows steeper characteristics and is designed to lower the leakage current while maintaining a high I ON / I OFF ratio. The polarization effect of negative capacitance has provided better outcomes in terms of a lower point subthreshold slope of 18 mV/dec and a leakage current of the order of 10 −14 A/μm. An enhanced I ON / I OFF ratio of around 10 10 has been attained, having a length of channel of 18 nm. Since the I OFF value of the device is low, its power consumption is about μW, making it acceptable for low‐power applications.