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September 26, 2024Journal of Physics D Applied Physics

Fabrication and formation mechanisms of Ohmic conducts with low annealing temperature for GaN/AlN superlattice barrier HEMTs

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Authors

SLShanjie LiFZFanyi ZengNWNengtao Wu

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Li et al. (2024) studied this question.

synapsesocial.com/papers/68e57539b6db643587515728https://doi.org/10.1088/1361-6463/ad7ffa
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  4. 4Low‐Resistivity Ti/Al/TiN/Au Ohmic Contacts to Ga‐ and N‐Face n‐GaN for Vertical Power Devices2024 · 12 citations
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