Optimization of Contact Resistance and DC Characteristics for AlGaN/GaN HEMTs Utilizing Sub-10 nm Nanohole Etching

Also Consider

Synapse has enriched 5 closely related papers on similar clinical questions. Consider them for comparative context:

1. 1Study of the Effect of Etching Under the Source/Drain Area on the DC Characteristics of GaN HEMTs2025
2. 2Fabrication and formation mechanisms of Ohmic conducts with low annealing temperature for GaN/AlN superlattice barrier HEMTs2024
3. 3Enhancing Drain Current Performance of AlGaN/GaN HEMT through Graded AlGaN Barrier2024 · 4 citations
4. 4Low contact resistance and high breakdown voltage of AlGaN/GaN HEMT grown on silicon using both AlN/GaN superlattice and Al0.07Ga0.93N back barrier layer2024 · 2 citations
5. 5Improvement of AlGaN/ GaN based HEMT with high performance rate for integrated circuit design for wide range of applications2024