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September 23, 2025Semiconductor Science and Technology

Study of the Effect of Etching Under the Source/Drain Area on the DC Characteristics of GaN HEMTs

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Authors

YZYanxu ZhuXYxiaolong YangYWYuhan Wang

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Overview

Numerical simulations demonstrate that etching affects DC characteristics in GaN HEMTs, suggesting optimal depth improves performance.

Key Points

  • Etching increased maximum saturated drain current from 884 mA/mm to 1285 mA/mm at 5V for conventional HEMT.
  • Maximum transconductance improved from 245 mS/mm to 318 mS/mm with etching in conventional HEMT.
  • Source-centered circular HEMT saw drain current rise from 870 mA/mm to 1190 mA/mm post-etching.
  • Optimizing etching depth is crucial for enhancing DC performance and preventing diminished improvements.

Cite This Study

Zhu et al. (2025) studied this question.

synapsesocial.com/papers/68d4725d31b076d99fa6b47chttps://doi.org/10.1088/1361-6641/ae09d5
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Also Consider

Synapse has enriched 5 closely related papers on similar clinical questions. Consider them for comparative context:

  1. 1Optimization of Contact Resistance and DC Characteristics for AlGaN/GaN HEMTs Utilizing Sub-10 nm Nanohole Etching2024 · 3 citations
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  3. 3Effect of AlGaN and InAlGaN Barrier Layers on the Performance of GaN-based HEMTs on Sapphire Substrates2026 · 2 citations
  4. 4Channel Material Impact on HEMT Performance: Insights from GaN, AlGaN, and InGaN2025
  5. 5Improvement of AlGaN/ GaN based HEMT with high performance rate for integrated circuit design for wide range of applications2024